A Novel RF SOI LDMOS with a Raised Drift Region

Analysis of a Novel Strained Silicon RF LDMOS

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...

Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances

A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for improvement of reduced surface field (RESURF) LDMOS transistor performance has been evaluated theoretically, numerically and experimentally in this paper for the first time. Due to the coupling effect of the two-dimensional (2D) electrical field, it is found from the theory developed here that the ...

FinFET versus UTBB SOI - A RF perspective

A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications

A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear wit...